| PART |
Description |
Maker |
| RM300DG-90S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM900DB-90S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM600DY-66S |
HIGH POWER SWITCHING USE INSULATED TYPE HVDi (High Voltage Diode) Module
|
Mitsubishi Electric Semiconductor
|
| CM400HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| FM400TU-07A09 |
MOSFET MODULE HIGH POWER SWITCHING USE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| FM400TU-2A09 |
MOSFET MODULE HIGH POWER SWITCHING USE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Sem...
|
| UFB130FA20 |
Insulated Ultrafast Rectifier Module
|
Vishay Siliconix
|
| UFB130FA20 |
Insulated Ultrafast Rectifier Module, 130 A
|
Vishay Siliconix
|
| UFL120FA60P |
Insulated Ultrafast Rectifier Module, 120 A
|
Vishay Siliconix
|
| VS-UFB130FA20 |
Insulated Ultrafast Rectifier Module, 130 A
|
Vishay Siliconix
|
| UFB200CB40P |
Not Insulated SOT-227 Power Module
|
Vishay Siliconix
|
